• Part: K4H1G0438A-TCA0
  • Description: 128Mb DDR SDRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 669.27 KB
Download K4H1G0438A-TCA0 Datasheet PDF
Samsung Semiconductor
K4H1G0438A-TCA0
K4H1G0438A-TCA0 is 128Mb DDR SDRAM manufactured by Samsung Semiconductor.
- Part of the K4H comparator family.
description method for the same functionality. This means no difference from the previous version. 3.Changed the following AC parameter symbol From. To. Output data access time from CK/CK t DQCK t AC Version 0.61(August 9,1999) - Changed the some values of "write with auto precharge" table for different bank in page 31. Asserted mand Old Read Read + AP- 1 Legal Legal For Different Bank 3 New Illegal Illegal Old Legal Legal 4 New Illegal Illegal - 2 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History(continued) Version 0.7 (March, 2000) - Changed 128Mb spec from target to Preliminary version. - Changed partnames as follows. from KM44L32031BT-G(L)Z/Y/0 KM48L16031BT-G(L)Z/Y/0 KM416L8031BT-G(L)Z/Y/0 - Changed input cap. spec. from CK/CK DQ/DQS/DM CMD/Addr 2.5p F ~ 3.5p F 4.0p F ~ 5.5p F 2.5p F ~ 3.5p F to 2.0p F ~ 3.0p F w/ Delta Cin = 0.25p F 4.0p F ~ 5.0p F w/ Delta Cin = 0.5p F 2.0p F ~ 3.0p F with Delta Cin = 0.5p F to K4H280438B-TC(L)A2/B0/A0 K4H280838B-TC(L)A2/B0/A0 K4H281638B-TC(L)A2/B0/A0 - Changed operating condition. from Vil/Vih(ac) VIL/VIH(dc) Vref +/- 0.35V Vref +/- 0.18V to Vref +/- 0.31V Vref +/- 0.15V - Added Overshoot/Undershoot spec . Vih(max) = 4.2V, the overshoot voltage duration is ≤ 3ns at VDD. . Vil(min) =- 1.5V, the overshoot voltage duration is ≤ 3ns at VSS. - Changed AC parameters as follows. from t DQSQ t DV t QH t HP - Added DC spec values. +/- 0.5(PC266), +/- 0.6(PC200) +/- 0.35t CK to +0.5(PC266), +0.6(PC200) t HPmin -...