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K4H510438C-UC Datasheet

Manufacturer: Samsung Semiconductor
K4H510438C-UC datasheet preview

Datasheet Details

Part number K4H510438C-UC
Datasheet K4H510438C-UC-Samsung.pdf
File Size 208.79 KB
Manufacturer Samsung Semiconductor
Description 512Mb C-die DDR SDRAM
K4H510438C-UC page 2 K4H510438C-UC page 3

K4H510438C-UC Overview

32Mb x 16 64Mb x 8 128Mb x 4 DDR SDRAM VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS.

K4H510438C-UC Key Features

  • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • DLL aligns DQ and DQS transition with CK transition
  • MRS cycle with address key programs
  • All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
  • Data I/O transactions on both edges of data strobe
  • Edge aligned data output, center aligned data input

K4H510438D from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Samsung semiconductor Logo K4H510438D (K4H51xx38D) 512Mb D-die DDR SDRAM Specification Samsung semiconductor
Samsung semiconductor Logo K4H510438F 512Mb F-die DDR SDRAM Specification Samsung semiconductor
Samsung semiconductor Logo K4H510438G 512Mb G-die DDR SDRAM Specification Samsung semiconductor
Samsung Semiconductor logo - Manufacturer

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K4H510438C-TLA2 128Mb DDR SDRAM
K4H510438C-TLB0 128Mb DDR SDRAM
K4H510438A-TCA0 128Mb DDR SDRAM
K4H510438A-TCA2 128Mb DDR SDRAM
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K4H510438A-TLA0 128Mb DDR SDRAM

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