K4H511638C-UC Datasheet (512Mb C-die DDR SDRAM)

Part: K4H511638C-UC
Manufacturer: Samsung Semiconductor
Size: 208.79 KB

K4H511638C-UC Key Features

VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe
Edge aligned data output, center aligned data input

Other K4H511638C-UC Datasheets

Manufacturer	Part Number	Description
Samsung Semiconductor	K4H511638D	(K4H51xx38D) 512Mb D-die DDR SDRAM Specification
Samsung Semiconductor	K4H511638D-LA2	512Mb D-die DDR SDRAM Specification 66 TSOP-II
Samsung Semiconductor	K4H511638D-LB0	512Mb D-die DDR SDRAM Specification 66 TSOP-II
Samsung Semiconductor	K4H511638D-LB3	512Mb D-die DDR SDRAM Specification 66 TSOP-II
Samsung Semiconductor	K4H511638D-LCC	512Mb D-die DDR SDRAM Specification 66 TSOP-II

K4H511638C-UC Description

32Mb x 16 64Mb x 8 128Mb x 4 DDR SDRAM VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS.