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K4H560838C-TCA0 - 128Mb DDR SDRAM

Download the K4H560838C-TCA0 datasheet PDF. This datasheet also covers the K4H variant, as both devices belong to the same 128mb ddr sdram family and are provided as variant models within a single manufacturer datasheet.

Description

method for the same functionality.

This means no difference from the previous version.

3.Changed the following AC parameter symbol From.

Features

  • 1.1 Features 1.2 Operating Frequencies 2. Package Pinout & Dimension 2.1 Package Pintout 2.2 Input/Output Function.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K4H-1G0.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K4H560838D-TCB3 256Mb D-die DDR Sdram Samsung Semiconductor
K4H560838F-TC DDR SDRAM 256Mb F-die Samsung Semiconductor
K4H560838F-TCC4 256Mb F-die DDR400 SDRAM Specification Samsung semiconductor
K4H560838F-TCCC 256Mb F-die DDR400 SDRAM Specification Samsung semiconductor
K4H560838F-UCC4 256Mb F-die DDR400 SDRAM Samsung semiconductor

Other Datasheets by Samsung Semiconductor

Part Number Description
K4H560838C-TCA2 128Mb DDR SDRAM
K4H560838C-TCB0 128Mb DDR SDRAM
K4H560838C-TLA0 128Mb DDR SDRAM
K4H560838C-TLA2 128Mb DDR SDRAM
K4H560838C-TLB0 128Mb DDR SDRAM

Full PDF Text Transcription

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128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - First version for internal review Version 0.1(June, 1998) - Added x4 organization Version 0.2(Sep,1998) 1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence. 2. In power down mode timing diagram, NOP condition is added to precharge power down exit. Version 0.3(Dec,1998) - Added QFC Function. - Added DC current value - Reduce I/O capacitance values Version 0.4(Feb,1999) -Added DDR SDRAM history for reference(refer to the following page) -Added low power version DC spec Version 0.
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