K4M281633F-RE - 2M x 16Bit x 4 Banks Mobile SDRAM

Product Overview

Samsung

Datasheet Details

Part number	K4M281633F-RE
Manufacturer	Samsung
File Size	114.34 KB
Description	2M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4M281633F-RE Datasheet
Additional preview pages of the K4M281633F-RE datasheet.

Product details

Description

The K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung

K4M281633F-C - 2M x 16Bit x 4 Banks Mobile SDRAM
K4M281633F-F1L - 2M x 16Bit x 4 Banks Mobile SDRAM
K4M281633F-G - 2M x 16Bit x 4 Banks Mobile SDRAM
K4M281633F-L - 2M x 16Bit x 4 Banks Mobile SDRAM
K4M281633F-N - 2M x 16Bit x 4 Banks Mobile SDRAM
K4M281633F - 2M x 16Bit x 4 Banks Mobile SDRAM

Published: Apr 25, 2005 |