K4M28163PF-RBGF75 - 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Product Overview

Samsung

Datasheet Details

Part number	K4M28163PF-RBGF75
Manufacturer	Samsung
File Size	113.95 KB
Description	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet	K4M28163PF-RBGF75 Datasheet
Additional preview pages of the K4M28163PF-RBGF75 datasheet.

Product details

Description

The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Published: Apr 25, 2005 |