K4M511533E-C - Mobile-SDRAM

Product Overview

Samsung

Datasheet Details

Part number	K4M511533E-C
Manufacturer	Samsung
File Size	106.48 KB
Description	Mobile-SDRAM
Datasheet	K4M511533E-C Datasheet
Additional preview pages of the K4M511533E-C datasheet.

Product details

Description

The K4M511533E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V or 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PAS.

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Published: Apr 25, 2005 |