K4M511633E - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Product Overview

Samsung

Datasheet Details

Part number	K4M511633E
Manufacturer	Samsung
File Size	112.42 KB
Description	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Datasheet	K4M511633E Datasheet
Additional preview pages of the K4M511633E datasheet.

Product details

Description

The K4M511633E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V or 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PAS.

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Other Datasheets by Samsung

K4M511633E-C - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E-F1H - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E-F1L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E-F75 - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E-L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E-P - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

Published: Apr 25, 2005 |