K4M51323LE-F1L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Product Overview

Samsung

Datasheet Details

Part number	K4M51323LE-F1L
Manufacturer	Samsung
File Size	141.21 KB
Description	4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Datasheet	K4M51323LE-F1L Datasheet
Additional preview pages of the K4M51323LE-F1L datasheet.

Product details

Description

The K4M51323LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Other Datasheets by Samsung

K4M51323LE-L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M51323LE-M - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M51323LE-MC - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M513233E - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M513233E-F1H - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
K4M513233E-F1L - 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Published: Apr 25, 2005 |