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K4N26323AE-GC - 128Mbit GDDR2 SDRAM

General Description

- 1bank, 2bank system - Added System Selection mode in EMRS table.

Rev.

1.7 (Jan.

Key Features

  • 2.5V + 0.1V power supply for device operation.
  • 1.8V + 0.1V power supply for I/O interface.
  • On-Die Termination for all inputs except CKE,ZQ.
  • Output Driver Strength adjustment by EMRS.
  • SSTL_18 compatible inputs/outputs.
  • 4 banks operation.
  • MRS cycle with address key programs - CAS latency : 5, 6, 7 (clock) - Burst length : 4 only - Burst type : sequential only.
  • Additive latency (AL): 0,1(clock).
  • Read latency(RL) : CL+.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4N26323AE-GC 128M GDDR2 SDRAM 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.7 (Jan. 2003) K4N26323AE-GC 128M GDDR2 SDRAM Revision History Revision 1.7 (January 23, 2003) - Changed the device name from GDDR-II to GDDR2 Revision 1.6 (December 18, 2002) - Typo corrected Revision 1.5 (December 4, 2002) - Typo corrected Revision 1.4 (November 12, 2002) - Changed the device name from DDR-II to GDDR-II - Typo corrected Revision 1.3 (November 8, 2002) - Typo corrected Revision 1.2 (November 5, 2002) - Typo corrected - Changed the Icc6 from 3mA to 7mA Revision 1.1 (October 30, 2002) - Typo corrected Revision 1.