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K4S561632E-UC60

Manufacturer: Samsung Semiconductor

K4S561632E-UC60 datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K4S561632E-UC60 datasheet preview

K4S561632E-UC60 Datasheet Details

Part number K4S561632E-UC60
Datasheet K4S561632E-UC60 K4S560432E-UC75 Datasheet (PDF)
File Size 195.84 KB
Manufacturer Samsung Semiconductor
Description SDRAM 256Mb E-die
K4S561632E-UC60 page 2 K4S561632E-UC60 page 3

K4S561632E-UC60 Overview

SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS pliant) Revision 1.3 August 2004 Samsung Electronics reserves the right to change products or specification without notice. 1.3 August 2004 SDRAM 256Mb E-die (x4, x8, x16) Revision History Revision 1.0 (May. 2003) - First generation for Pb_free products Revision 1.1 (August.

K4S561632E-UC60 Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL patible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs
  • CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
  • All inputs are sampled at the positi
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K4S561632E-UC75 SDRAM 256Mb E-die
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K4S560432E-UC75 SDRAM 256Mb E-die
K4S560832E-UC75 SDRAM 256Mb E-die
K4S510432D 512Mb D-die SDRAM
K4S510832D 512Mb D-die SDRAM
K4S511632D 512Mb D-die SDRAM
K4S281632K 128Mb K-die SDRAM
K4S640832N 64Mb N-die SDRAM
K4S641632N 64Mb N-die SDRAM

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