K4S561632E-UC75 Description
SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS pliant) Revision 1.3 August 2004 Samsung Electronics reserves the right to change products or specification without notice. 1.3 August 2004 SDRAM 256Mb E-die (x4, x8, x16) Revision History Revision 1.0 (May. 2003) - First generation for Pb_free products Revision 1.1 (August.
K4S561632E-UC75 Key Features
- JEDEC standard 3.3V power supply
- LVTTL patible with multiplexed address
- Four banks operation
- MRS cycle with address key programs
- CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
- All inputs are sampled at the positi