K4S643232H-UC-L55 - 2M x 32 SDRAM

This page provides the datasheet information for the K4S643232H-UC-L55, a member of the K4S643232H-UC-L70 2M x 32 SDRAM family.

Product Overview

Samsung

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Datasheet Details

Part number	K4S643232H-UC-L55
Manufacturer	Samsung
File Size	407.31 KB
Description	2M x 32 SDRAM
Datasheet	K4S643232H-UC-L55 Datasheet
Additional preview pages of the K4S643232H-UC-L55 datasheet.

K4S643232H-UC-L55 Product details

Description

The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
15.6u.

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Other Datasheets by Samsung

K4S643232H-UC-L50 - 2M x 32 SDRAM
K4S643232H-UC-L60 - 2M x 32 SDRAM
K4S643232H-UC-L70 - 2M x 32 SDRAM
K4S643232H-TC-L50 - 64Mb H-die (x32) SDRAM
K4S643232H-TC-L55 - 64Mb H-die (x32) SDRAM
K4S643232H-TC-L60 - 64Mb H-die (x32) SDRAM
K4S643232H-TC-L70 - 64Mb H-die (x32) SDRAM
K4S640832N - 64Mb N-die SDRAM

Published: Jul 8, 2016 |