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K521F12ACD-B060 - 1Gb (128M x8) NAND Flash + 512Mb (32M x16) Mobile DDR SDRAM

Description

The K521F12ACD is a Multi Chip Package Memory which combines 1Gbit NAND Flash Memory and 512Mbit DDR synchronous high data rate Dynamic RAM.

NAND cell provides the most cost-effective solution for the solid state application market.

Features

  • Operating Temperature : -25°C ~ 85°C.
  • Package : 107ball FBGA Type - 10.5x13x1.2mmt, 0.8mm pitch.
  • Voltage Supply : 1.7V ~ 1.95V.
  • Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 40µs(Max. TBD) - Serial Access : 42ns(Min.

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Datasheet preview – K521F12ACD-B060

Datasheet Details

Part number K521F12ACD-B060
Manufacturer Samsung Semiconductor
File Size 2.17 MB
Description 1Gb (128M x8) NAND Flash + 512Mb (32M x16) Mobile DDR SDRAM
Datasheet download datasheet K521F12ACD-B060 Datasheet
Additional preview pages of the K521F12ACD-B060 datasheet.

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    Full PDF Text Transcription

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    Rev. 0.0, Nov. 2009 K521F12ACD-B060 Preliminary MCP Specification 1Gb (128M x8) NAND Flash + 512Mb (32M x16) Mobile DDR SDRAM www.DataSheet.co.kr datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
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