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K6R4008C1C

Manufacturer: Samsung Semiconductor

K6R4008C1C datasheet by Samsung Semiconductor.

K6R4008C1C datasheet preview

K6R4008C1C Datasheet Details

Part number K6R4008C1C
Datasheet K6R4008C1C_Samsung.pdf
File Size 183.32 KB
Manufacturer Samsung Semiconductor
Description 512K x 8bit High Speed Static CMOS SRAM
K6R4008C1C page 2 K6R4008C1C page 3

K6R4008C1C Overview

The K6R4008C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1C uses 8 mon input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology.

K6R4008C1C Key Features

  • Fast Access Time 10,12,15,20ns(Max.)
  • Single 5.0V±10% Power Supply
  • TTL patible Inputs and Outputs
  • I/O patible with 3.3V Device
  • Fully Static Operation
  • No Clock or Refresh required
  • Three State Outputs
  • Center Power/Ground

K6R4008C1D from other manufacturers

View K6R4008C1D datasheet index

Brand Logo Part Number Description Other Manufacturers
Samsung semiconductor Logo K6R4008C1D 512K x8 Bit High Speed Static RAM Samsung semiconductor
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number Description
K6R4008C1C-C 512K x 8bit High Speed Static CMOS SRAM
K6R4008C1C-E 512K x 8bit High Speed Static CMOS SRAM
K6R4008C1C-I 512K x 8bit High Speed Static CMOS SRAM
K6R4016C1D CMOS SRAM

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