K7A403600M - 128K x 36 Synchronous SRAM

Product Overview

Samsung

Datasheet Details

Part number	K7A403600M
Manufacturer	Samsung
File Size	307.80 KB
Description	128K x 36 Synchronous SRAM
Datasheet	K7A403600M Datasheet
Additional preview pages of the K7A403600M datasheet.

Product details

Description

The K7A403600M is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 3.3V+0.3V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
P.

📁 Similar Datasheet

K7A403600B - 128K x 36 / x 32 & 256K x 18 Synchronous SRAM (Samsung semiconductor)
K7A403601B - 128Kx36 & 128Kx32 Synchronous SRAM (Samsung semiconductor)
K7A403609A - 128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM (Samsung semiconductor)
K7A403609B - 128Kx36/x32 & 256Kx18 Synchronous SRAM (Samsung semiconductor)
K7A403200B - 128K x 36 / x 32 & 256K x 18 Synchronous SRAM (Samsung semiconductor)
K7A403201B - 128Kx36 & 128Kx32 Synchronous SRAM (Samsung semiconductor)
K7A403209B - 128Kx36/x32 & 256Kx18 Synchronous SRAM (Samsung semiconductor)
K7A401800B - 128K x 36 / x 32 & 256K x 18 Synchronous SRAM (Samsung semiconductor)

Other Datasheets by Samsung

Published: Aug 2, 2013 |