Datasheet4U Logo Datasheet4U.com

K8Q2815UQB - FLASH MEMORY

Description

Read While Program/Erase Operation

The K8Q2815UQB featuring single 3.0V power supply, is an 128Mbit NOR-type Flash Memory organized as 8M x16.

Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations.
  • Endurance : 100,000 Program/Erase Cycles Minimum.
  • Organization.
  • Data Retention : 10 years 8M x16 bit (Word mode Only).
  • Vccq options at 1.8V and 3V I/O.
  • Fast Read Access Time : 60ns.
  • Package options.
  • Page Mode Operation 8 Words Page access allows fast asychronous read Page Read Access Time : 20ns - 56 Pin TSOP (20x14mm) only.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Samsung Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
K8Q2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification Dual Die Package (56TSOP) (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
Published: |