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K9F2808U0C - FLASH MEMORY

Datasheet Summary

Description

Offered in 16Mx8bit , the K9F2808U0C is 128M bit with spare 4M bit capacity.

The device is offered in 3.3V Vcc.

Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market.

Features

  • and specifications including FAQ, please refer to Samsung’s Flash web site. http://www. samsung. com/Products/Semiconductor/Flash/TechnicalInfo/datasheets. htm The attached datasheets are prepared and approved by.

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Datasheet preview – K9F2808U0C

Datasheet Details

Part number K9F2808U0C
Manufacturer Samsung
File Size 812.75 KB
Description FLASH MEMORY
Datasheet download datasheet K9F2808U0C Datasheet
Additional preview pages of the K9F2808U0C datasheet.

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Full PDF Text Transcription

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K9F2808U0C FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 1.0 Initial issue. TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm 1.A3 Pin assignment of TBGA Package is changed.(Page 4) (before) NC --> (after) Vss 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 33) The min. Vcc value 1.8V devices is changed. K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V 2.2 Pb-free Package is added. K9F2808U0C-FCB0,FIB0 K9F2808Q0C-HCB0,HIB0 K9F2816U0C-HCB0,HIB0 K9F2816U0C-PCB0,PIB0 K9F2816Q0C-HCB0,HIB0 K9F2808U0C-HCB0,HIB0 K9F2808U0C-PCB0,PIB0 2.3 Some AC parameters are changed(K9F28XXQ0C).
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