K9F2808U0C
Key Features
- Voltage Supply : 2.7 ~ 3.6 V
- Organization - Memory Cell Array -(16M + 512K)bit x 8bit - Data Register - (512 + 16)bit x 8bit
- Automatic Program and Erase - Page Program -(512 + 16)Byte - Block Erase : - (16K + 512)Byte
- Page Read Operation - Page Size - (512 + 16)Byte - Random Access : 10µs(Max.) - Serial Page Access : 50ns(Min.)
- Fast Write Cycle Time - Program time : 200µs(Typ.) - Block Erase Time : 2ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection - Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cyc
