K9HDG08U5A Datasheet | Samsung Semiconductor

..net Rev.1.0, May. 2010 K9GBG08U0A K9LCG08U1A K9HDG08U5A 32Gb A-die NAND Flash Multi-Level-Cell (2bit/cell) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2009 Samsung Electronics Co., Ltd. All rights reserved. -1- ..net K9GBG08U0A K9LCG08U1A K9HDG08U5A datasheet History Rev. 1.0 FLASH MEMORY Revision History Revision No. 0.0 1. Initial issue 1. Value of Random Read is changed. 2. Package size is amended. (14x18 -> 13x18) 3. Package configuration for K9HDG08U5A-L and K9PFG08U5A-L is amended. 4. Pin descriptions for Vcc Q and Vss Q are added. 5. Voltage on any pin relative to VSS for Vcc Q=1.8V is added in table 2.1. 6. Temperature Under Bias(TBIAS) is deleted. 7. Table 2.3 DC AND OPERATING CHARACTERISTICS is modified. (Vcc Q=1.8V added) 8. Frequency condition of Capacitance is changed from 1.0Mhz to 100Mhz. 9. Dummy Busy Time for Intelligent Copy-Back Read(t CBSY2) is added....