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K9K2G16Q0M-PIB0 - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

General Description

Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity.

Its NAND cell provides the most costeffective solution for the solid state mass storage market.

Key Features

  • Voltage Supply -1.8V device(K9K2GXXQ0M): 1.70V~1.95V -3.3V device(K9K2GXXU0M): 2.7 V ~3.6 V.
  • Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9K2G08X0M) : (2K + 64)bit x8bit -X16 device(K9K2G16X0M) : (1K + 32)bit x16bit.
  • Automatic Program and Erase -.

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📁 Similar Datasheet

Part Number Description Manufacturer
K9K2G08Q0M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung semiconductor
K9K2G08Q0M-P 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung semiconductor
K9K2G08Q0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung semiconductor
K9K2G08Q0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung semiconductor
K9K2G08Q0M-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Samsung semiconductor

Other Datasheets by Samsung Semiconductor

Part Number Description
K9K2G16Q0M-P 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-Y 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G16Q0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0 K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0,PIB0 FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Sep. 19.2001 Nov. 5. 2001 Remark Advance 0.2 1. 5th cycle of ID is changed : 40h --> 44h Jan. 23.2002 0.3 1. Add WSOP Package Dimensions. May. 29.2002 0.4 1. Max Icc value of 1.8V/3.3V device is changed. - Max. value Icc1,Icc2,Icc3: 20mA --> 30mA (3.3V device) - Max. value Icc1,Icc2,Icc3: 15mA --> 20mA (1.8V device) Sep. 12.2002 0.5 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.