• Part: K9K4G08U0M
  • Description: 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
  • Manufacturer: Samsung Semiconductor
  • Size: 601.67 KB
K9K4G08U0M Datasheet (PDF) Download
Samsung Semiconductor
K9K4G08U0M

Description

Offered in 512Mx8bit or 256Mx16bit, the K9XXGXXXXM is 4G bit with spare 128M bit capacity.

Key Features

  • Fast Write Cycle Time - Program time : 300µs(Typ.) - Block Erase Time : 2ms(Typ.)
  • mand/Address/Data Multiplexed I/O Port
  • Hardware Data Protection - Program/Erase Lockout During Power Transitions
  • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years
  • mand Register Operation
  • Cache Program Operation for High Performance Program
  • Power-On Auto-Read Operation
  • Intelligent Copy-Back Operation
  • Unique ID for Copyright Protection