K9NBG08U5M Datasheet NAND Flash Memory

Manufacturer: Samsung Semiconductor

K9NBG08U5M nand flash memory by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K9NBG08U5M
Manufacturer	Samsung Semiconductor
File Size	1.30 MB
Description	NAND Flash Memory
Download	K9NBG08U5M Download (PDF)

Overview

K9WAG08U1M K9K8G08U0M K9NBG08U5M FLASH MEMORY K9XXG08UXM www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Key Features

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Voltage Supply - 2.70V ~ 3.60V.
Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit.
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max. ) - Serial Access : 25ns(Min. ).
K9NBG08U5M : 50ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.5ms(Typ.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	K9NBG08U5A	(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory	Samsung semiconductor

More Datasheets from Samsung Semiconductor

Part Number	Description
K9NCG08U5M	FLASH MEMORY