K9WBG08U1M Overview
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K9WBG08U1M Key Features
- Voltage Supply
- 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V
- Organization
- Memory Cell Array : (2G + 64M) x 8bit
- Data Register : (4K + 128) x 8bit
- Automatic Program and Erase
- Page Program : (4K + 128)Byte
- Block Erase : (256K + 8K)Byte
- Page Read Operation
- Page Size
K9WBG08U1M Applications
- Samsung Electronics reserves the right to change products or specification without notice