K9WBG08U1M - FLASH MEMORY

This page provides the datasheet information for the K9WBG08U1M, a member of the K9WB-G08U FLASH MEMORY family.

Product Overview

Samsung

Part number	K9WBG08U1M
Manufacturer	Samsung
File Size	1.80 MB
Description	FLASH MEMORY
Datasheet	K9WBG08U1M Datasheet
Additional preview pages of the K9WBG08U1M datasheet.

Offered in 2Gx8bit, the K9KAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.

The device is offered in 3.3V vcc.

Its NAND cell provides the most cost-effective solution for the solid state application market.

Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
K9NCG08U5M : 50ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.

K9WAG08U1A - (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9WAG08U1M - (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory (Samsung semiconductor)

Other Datasheets by Samsung

Published: Mar 10, 2014 |