Samsung KM616FS1000
The KM616FV1000, KM616FS1000 and KM616FR1000 families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating temperature ranges for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.| Part No. | KM616FS1000 |
|---|---|
| Datasheet | KM616FS1000 Download |
| Manufacturer |  Samsung |
| Description | 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM |
| Buy | Stock & Price |
FEATURES
● Process Technology : Full CMOS● Organization : 64Kx16 bit
● Power Supply Voltage KM616FV1000 Family : 3.0V ~ 3.6V KM616FS1000 Family : 2.3V ~ 3.3V KM616FR1000 Family : 1.8V ~ 2.7V
● Low Data Retention Voltage : 1.5V(Min)
● Three state output status and TTL Compatible
● Package Type : 44-TSOP2-400F
GENERAL DESCRIPTION
PRODUCT FAMILY Product Family Operating Temperature Vcc Range KM616FV1000 3.0~3.6V KM616FS1000 Commercial(0~70°C) 2.3~3.3V KM616FR1000 KM616FV1000I KM616FS1000I Industrial(-40~85°C) 1.8~2.7V 3.0~3.6V 2.3~3.3V KM616FR1000I 1.8~2.7V 1. The parameter is measured with 30pF test load. 2. Super low power product=1µA with special handling. PINDESCRIPTION
Speed(ns) 701)/85@VCC=3.3±0.3V 701)/85@VCC=3.0±0.3V 1201)/150@VCC=2.5±0.2V 3001)@VCC=2.0±0.2V 701)/85@VCC=3.3±0.3V 701)/85@VCC=3.0±0.3V 1201)/150@VCC=2.5±0.2V 3001)@VCC=2.0±0.2V Power Dissipation Standby (ISB1, Max) Operating (ICC2, Max) 80mA 80mA 50mA 5µA2) 20mA 80mA 80mA 50mA 20mA FUNCTIONAL BLOCK DIAGRAM PKG Type...
