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KM616FS1000 - 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM

Download the KM616FS1000 datasheet PDF. This datasheet also covers the KM616FV1000 variant, as both devices belong to the same 64k x 16-bit super low power and low voltage full cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The KM616FV1000, KM616FS1000 and KM616FR1000 families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

The families support various operating temperature ranges for user flexibility of system design.

Key Features

  • Process Technology : Full CMOS.
  • Organization : 64Kx16 bit.
  • Power Supply Voltage KM616FV1000 Family : 3.0V ~ 3.6V KM616FS1000 Family : 2.3V ~ 3.3V KM616FR1000 Family : 1.8V ~ 2.7V.
  • Low Data Retention Voltage : 1.5V(Min).
  • Three state output status and TTL Compatible.
  • Package Type : 44-TSOP2-400F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM616FV1000-Samsung.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
KM6161000B 64K X 16-Bit Low Power CMOS Static RAM Samsung Electronics
KM6164000B 256Kx16 bit Low Power CMOS Static RAM Samsung semiconductor
KM6164002 CMOS SRAM Samsung semiconductor
KM62256A 32K X 8-Bit Static RAM Samsung Electronics
KM62256AL 32K X 8-Bit Static RAM Samsung Electronics

Other Datasheets by Samsung Semiconductor

Part Number Description
KM616FR1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
KM616FV1000 64K x 16-bit Super Low Power and Low Voltage Full CMOS Static RAM
KM6161002A CMOS SRAM
KM6161002B CMOS SRAM
KM6161002C CMOS SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
KM616FV1000, KM616FS1000, KM616FR1000 Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 0.1 Revise - Erase 100ns part from KM616FS1000 Family - Add 150ns part on KM616FS1000 Family - Add 32-sTSOP1 new package - Add high power version ISB1=5.0µA(Max) - Change VDR(Min) 1.0 to 1.5V 1.0 Finalize - Concept change high power version to low low power version ISB1=5.0µA(Max) - Change super low power version with special handling ISB1=1.0µA(Max) - Reduce Icc & Icc1 Read : 15mA to 10mA Write : 25mA to 20mA 2.