KM62256C Datasheet | Samsung Semiconductor

FEATURES - Process Technology : 0.7 µ m CMOS - Organization : 32Kx8 - Power Supply Voltage : Single 5V ±10% - Low Data Retention Voltage : 2V(Min) - Three state output and TTL patible - Package Type : 28-DIP-600, 28-SOP-450, 28-TSOP1 -0813.4F/R CMOS SRAM GENERAL DESCRIPTION The KM62256C family is fabricated by SAMSUNG ′s advanced CMOS process technology. The family supports various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L Operating Temperature. Speed(ns) PKG Type Standby (ISB1 , Max) 100µ A 20µA 100µ A 50µA 100µ A 50µA 70m A Operating (Icc2) mercial (0~70°C) Extended (-25~85°C) Industrial (-40~85°C) 55/70ns 28-DIP, 28-SOP 28-TSOP I R/F 28-SOP 28-TSOP I R/F 28-SOP 28-TSOP I R/F 70ns 70ns PIN DESCRIPTION OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 A3 A4 A5 A6 A7 A12 A14 VCC WE A13 A8 A9 A11 OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 14 13 12 11 10 9 8 7 6 5 4 3 2 1 28 27 26 25 24 23 22 21 20 19 18 17 16 15 15 16 17 18 19 20 21 22 23 24 25 26 27 28 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A2 A1 A0 I/O1 I/O2 I/O3 VSS I/O4 I/O5 I/O6 I/O7 I/O8 CS A10 FUNCTIONAL BLOCK DIAGRAM Clk gen. Precharge circuit. A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 VCC WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 28-TSOP Type I - Forward A3 A4 A5 A6 A7 A8 A12 A13 A14 Row select 28-DIP 22 28-SOP 21 20 19 18 17 16 15 Memory array 512 rows 64×8 columns 28-TSOP Type I - Reverse I/O1 I/O8 Data cont I/O Circuit Column select Data cont Name Name A0~A14 WE CS...