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KM62256D - 32K x 8 bit Low Power CMOS Static RAM

Description

The KM62256D families are fabricated by SAMSUNG′s advanced CMOS process technology.

The families support various operating temperature ranges and have various package types for user flexibility of system design.

Features

  • Process Technology : TFT Organization : 32Kx8 Power Supply Voltage : 4.5~5.5V Low Data Retention Voltage : 2V(Min) Three state output and TTL Compatible Package Type : 28-DIP-600B, 28-SOP-450 28-TSOP1-0813.4 F/R CMOS SRAM.

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Datasheet preview – KM62256D

Datasheet Details

Part number KM62256D
Manufacturer Samsung
File Size 170.34 KB
Description 32K x 8 bit Low Power CMOS Static RAM
Datasheet download datasheet KM62256D Datasheet
Additional preview pages of the KM62256D datasheet.

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Other Datasheets by Samsung
  • KM62256DL - 32K x 8 bit Low Power CMOS Static RAM
  • KM62256DL-L - 32K x 8 bit Low Power CMOS Static RAM
  • KM62256DLI - 32K x 8 bit Low Power CMOS Static RAM
  • KM62256DLI-L - 32K x 8 bit Low Power CMOS Static RAM
  • KM62256BL - 32K x 8-Bit High Speed CMOS Static RAM
  • KM62256BL-L - 32K x 8-Bit High Speed CMOS Static RAM
  • KM62256C - 32K x 8 bit Low Power CMOS Static RAM
  • KM62256CL - 32K x 8 bit Low Power CMOS Static RAM

Full PDF Text Transcription

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KM62256D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM62256D-4/5/7 Family tOH = 5 → 10ns - KM62256DL/DLI IDR = 50→30µA KM62256DL-L/DLI-L I DR = 30 → 15µA Finalize - Remove ICC write value - Improved operating current ICC2 = 70 → 60mA - Improved standby current KM62256DL/DLI ISB1 = 50 → 30µA KM62256DL-L I SB1 = 10 → 5µA KM62256DLI-L ISB1 = 15 → 5µA - Improved data retention current KM62256DL/DLI IDR = 30 → 5µA KM62256DL-L/DLI-L IDR = 15 → 3µ A - Remove 45ns part from commercial product and 100ns part from industrial product.
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