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KM6264B - 8K x 8 bit Low Power CMOS Static RAM

General Description

The KM6264B family is fabricated by SAMSUNG's advanced CMOS process technology.

The family can support various operating temperature ranges and has various package types for user flexibility of system design.

Key Features

  • the beginning of write to the end of write. 2. tCW is measured from the later of /CS1 going low or CS2 going high to the end of write. 3. tAS is measured from.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KM62256BL 32K x 8-Bit High Speed CMOS Static RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KM6264B Family 8Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY • Process Technology : CMOS • Organization : 8K x 8 • Power Supply Voltage : Single 5V ± 10% • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : JEDEC Standard 28-DIP, 28-SOP CMOS SRAM GENERAL DESCRIPTION The KM6264B family is fabricated by SAMSUNG's advanced CMOS process technology. The family can support various operating temperature ranges and has various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operations with low data retention current.