KMM366S403CTL Datasheet Pc66 Sdram Module

Manufacturer: Samsung Semiconductor

Overview: KMM366S403CTL Revision History Revision .3 (Mar. 1998) PC66 SDRAM MODULE •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV. - AC Operating Condition is changed as defined : VIH(max) = 5.6V AC. The overshoot voltage duration is≤ 3ns. VIL(min) = -2.0V AC. The undershoot voltage duration is≤ 3ns. REV. 3 Mar. '98 KMM366S403CTL KMM366S403CTL SDRAM DIMM PC66 SDRAM MODULE 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.

Datasheet Details

Part number	KMM366S403CTL
Manufacturer	Samsung Semiconductor
File Size	162.23 KB
Description	PC66 SDRAM MODULE
Datasheet	KMM366S403CTL_Samsung.pdf

General Description

The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung KMM366S403CTL consists of sixteen CMOS 2M x 8 bit Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Two 0.33uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.

Key Features

put signals are changed one time during 30ns CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable IOL = 0 mA Page burst 2Banks activated tCCD = 2CLKs tRC ≥ tRC(min) CKE ≤ 0.2V 3 2 CAS Latency PC66 SDRAM.

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