• Part: KMS5U000KM-B308
  • Description: 4Gb DDP(64M x 32 + 64M x 32) Mobile DDR SDRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 843.88 KB
Download KMS5U000KM-B308 Datasheet PDF
Samsung Semiconductor
KMS5U000KM-B308
KMS5U000KM-B308 is 4Gb DDP(64M x 32 + 64M x 32) Mobile DDR SDRAM manufactured by Samsung Semiconductor.
FEATURES <mon> - Operating Temperature : -25C ~ 85C - Package : 153ball FBGA Type - 11.5 x 13 x 1.0mmt, 0.5mm pitch <e- MMC> Multi Media Card System Specification Ver. 4.41 patible. Detail description is referenced by JEDEC Standard - SAMSUNG e- MMC supports below special features which are being discussed in JEDEC - High Priority Interrupt scheme is supported - Back ground operation is supported. - Full backward patibility with previous Multi Media Card system ( 1bit data bus, multi-e- MMC systems) - Data bus sidth :1bit(Default), 4bit and 8bit - MMC I/F Clock Frequency : 0 ~ 52MHz MMC I/F Boot Frequency : 0 ~ 52MHz - Dual Data Rate mode is supported - Power : Interface power → VDD = VCCQm(1.70V ~ 1.95V or 2.7V ~ 3.6V) , Memory power → VDDF = VCCm(2.7V ~ 3.6V) <Mobile DDR SDRAM> - VDD/VDDQ = 1.8V/1.8V - Double-data-rate architecture; two data transfers per clock cycle. - Bidirectional data strobe (DQS). - Four banks operation. - Differential clock inputs (CK and CK). - MRS cycle with address key programs. - CAS Latency (3) - Burst Length (2, 4, 8, 16) - Burst Type (Sequential & Interleave) - EMRS cycle with address key programs. - Partial Array Self Refresh (Full, 1/2, 1/4 Array) - Output Driver Strength Control (Full, 1/2, 1/4, 1/8, 3/4, 3/8, 5/8, 7/8) - Internal Temperature pensated Self Refresh. - All inputs except...