KMS5U000KM-B308
KMS5U000KM-B308 is 4Gb DDP(64M x 32 + 64M x 32) Mobile DDR SDRAM manufactured by Samsung Semiconductor.
FEATURES
<mon>
- Operating Temperature : -25C ~ 85C
- Package : 153ball FBGA Type
- 11.5 x 13 x 1.0mmt, 0.5mm pitch
<e- MMC>
Multi Media Card System Specification Ver. 4.41 patible. Detail description is referenced by JEDEC Standard
- SAMSUNG e- MMC supports below special features which are being discussed in JEDEC
- High Priority Interrupt scheme is supported
- Back ground operation is supported.
- Full backward patibility with previous Multi Media Card system ( 1bit data bus, multi-e- MMC systems)
- Data bus sidth :1bit(Default), 4bit and 8bit
- MMC I/F Clock Frequency : 0 ~ 52MHz
MMC I/F Boot Frequency : 0 ~ 52MHz
- Dual Data Rate mode is supported
- Power : Interface power → VDD = VCCQm(1.70V ~ 1.95V or 2.7V ~ 3.6V) , Memory power → VDDF = VCCm(2.7V ~ 3.6V)
<Mobile DDR SDRAM>
- VDD/VDDQ = 1.8V/1.8V
- Double-data-rate architecture; two data transfers per clock cycle.
- Bidirectional data strobe (DQS).
- Four banks operation.
- Differential clock inputs (CK and CK).
- MRS cycle with address key programs.
- CAS Latency (3)
- Burst Length (2, 4, 8, 16)
- Burst Type (Sequential & Interleave)
- EMRS cycle with address key programs.
- Partial Array Self Refresh (Full, 1/2, 1/4 Array)
- Output Driver Strength Control (Full, 1/2, 1/4, 1/8, 3/4, 3/8, 5/8, 7/8)
- Internal Temperature pensated Self Refresh.
- All inputs except...