Samsung KSA931
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG -80 -60 -8 -700 1 150 -55 ~ +150 Unit V V V mA W&& TO-92L 1. Emitter 2. Collector 3. BaseELECTRICAL CHARACTERISTICS
(TA=25 ) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance s % Pulse Test: PW350 , Duty cycle 2% Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT COB Test Conditions }IC= -100 , IE=0 }IC= -10mA, IB=0 IE= -100