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KSA931 Datasheet PDF

Samsung KSA931

PNP EPITAXIAL SILICON TRANSISTOR

Part No. KSA931
Datasheet KSA931 Download
Manufacturer
Samsung
Description PNP EPITAXIAL SILICON TRANSISTOR
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KSA931 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG -80 -60 -8 -700 1 150 -55 ~ +150 Unit V V V mA W&& TO-92L 1. Emitter 2. Collector 3. Base

ELECTRICAL CHARACTERISTICS

(TA=25 ) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance s % Pulse Test: PW350 , Duty cycle 2% Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT COB Test Conditions }IC= -100 , IE=0 }IC= -10mA, IB=0 IE= -100
KSA931 page 2 preview