M312L6420ETS
Feature
- Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V
- Double-data-rate architecture; two data transfers per clock cycle
- Bidirectional data strobe(DQS)
- Differential clock inputs(CK and CK)
- DLL aligns DQ and DQS transition with CK transition
- Programmable Read latency 2, 2.5 (clock)
- Programmable Burst length (2, 4, 8)
- Programmable Burst type (sequential & interleave)
- Edge aligned data output, center aligned data input
- Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
- Serial presence detect with EEPROM
- 1,700mil / 1,200mil height & double sided
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Revision 1.4 February, 2004
256MB, 512MB, 1GB Registered DIMM
Pin Configuration (Front side/back side)
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Front VREF DQ0 VSS DQ1 DQS0 DQ2 VDD DQ3 NC /RESET VSS DQ8 DQ9 DQS1 VDDQ
- CK1
- /CK1 VSS DQ10 DQ11 CKE0 VDDQ DQ16...
