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M378T2953BG0-CC - DDR2 Unbuffered SDRAM MODULE

General Description

Pin Name A0-A13 BA0, BA1 RAS CAS WE S0, S1 CKE0,CKE1 ODT0, ODT1 DQ0 - DQ63 CB0 - CB7 DQS0 - DQS8 DM(0-8) DQS0-DQS8 Description DDR2 SDRAM address bus DDR2 SDRAM bank select DDR2 SDRAM row address strobe DDR2 SDRAM column address strobe DDR2 SDRAM wirte enable DIMM Rank Select Lines DDR2 SDRAM clock

Key Features

  • Performance range D5(DDR2-533) Speed@CL3 Speed@CL4 Speed@CL5 CL-tRCD-tRP 400 533 4-4-4 CC(DDR2-400) 400 400 3-3-3 Unit Mbps Mbps Mbps CK.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin.
  • 4 Bank.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Read Latency(RL) -1.
  • B.

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Other Datasheets by Samsung Semiconductor

Part Number Description
M378T2863FBS 240pin Unbuffered DIMM
M378T2863RZS DDR2 SDRAM UDIMM
M378T3354BG DDR2 Unbuffered SDRAM MODULE
M378T3354BG0-CC DDR2 Unbuffered SDRAM MODULE
M378T5663FB3 240pin Unbuffered DIMM

Full PDF Text Transcription (Reference)

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256MB,512MB,1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC Revision 1.2 January 2005 Rev. 1.2 Jan. 2005 256MB,512MB,1GB Unbuffered DIMMs DDR2 Unbuffered DIMM Ordering Information Part Number Density Organization Component Composition Number of Rank 1 1 2 1 2 DDR2 SDRAM Height x64 Non ECC M378T3354BG(Z)0-CD5/CC M378T6553BG(Z)0-CD5/CC M378T2953BG(Z)0-CD5/CC M391T6553BG(Z)0-CD5/CC M391T2953BG(Z)0-CD5/CC 256MB 512MB 1GB 512MB 1GB 32Mx64 64Mx64 128Mx64 x72 ECC 64Mx72 128Mx72 64Mx8(K4T51083QB)*9 64Mx8(K4T51083QB)*18 30mm 30mm 32Mx16(K4T51163QB)*4 64Mx8(K4T51083QB)*8 64Mx8(K4T51083QB)*16 30mm 30mm 30mm Note: “Z” of Part number stand for Lead-free products.