• Part: M378T3354BG
  • Description: DDR2 Unbuffered SDRAM MODULE
  • Manufacturer: Samsung Semiconductor
  • Size: 367.17 KB
Download M378T3354BG Datasheet PDF
M378T3354BG page 2
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M378T3354BG page 3
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M378T3354BG Key Features

  • Performance range
  • JEDEC standard 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin
  • 4 Bank
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)