SW3N90U - N-channel MOSFET

Samwin

General Description

Gate 2.

Drain 3.

Key Features

TO-251 TO-251M TO-252.
High ruggedness.
Low RDS(ON) (Typ 4.8Ω)@VGS=10V.
Low Gate Charge (Typ 19nC).
Improved dv/dt Capability.
100% Avalanche Tested.

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SW3N90U n-channel mosfet by Samwin - Datasheet Preview

Datasheet Details

Part number	SW3N90U
Manufacturer	Samwin
File Size	848.77 KB
Description	N-channel MOSFET
Datasheet	SW3N90U Datasheet

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Full PDF Text Transcription (Reference)

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SW3N90U N-channel Enhanced mode TO-251/TO-251M/TO-252 MOSFET Features TO-251 TO-251M TO-252  High ruggedness  Low RDS(ON) (Typ 4.8Ω)@VGS=10V  Low Gate Charge (Typ 19nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Adaptor, LED, Industrial Power 1 2 3 1 2 3 1 2 3 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 900V ID : 3A RDS(ON) : 4.