Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
Key Features
- High ruggedness
- Low RDS(ON) (Typ 60mΩ)@VGS=10V
- Low Gate Charge (Typ 152nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:Charger,LED,PC Power