SW640 Datasheet N-channel MOSFET

Manufacturer: Samwin

Overview: SAMWIN General.

Datasheet Details

N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.18 ohm : 18A : 40 nc : 139 W SW640 This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and als.

Brand Logo	Part Number	Description	Manufacturer
Shenzhen	SW640	Battery	Shenzhen