SW6N70DB Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Drain current is limited by junction temperature.
SW6N70DB Key Features
- High ruggedness
- Low RDS(ON) (Typ 1.4Ω)@VGS=10V
- Low Gate Charge (Typ 30nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:LED, PC Power, Charger