Datasheet Summary
N-channel Enhanced mode TO-220F /TO-252/TO-251N MOSFET
Features
- High ruggedness
- Low RDS(ON) (Typ 1.4Ω)@VGS=10V
- Low Gate Charge (Typ 30nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application:LED, PC Power, Charger
TO-220F TO-252 TO-251N
12 3
12 3
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 700V
: 6A
RDS(ON) : 1.4Ω
1 3
Order Codes
Item
Sales Type
SW F 6N70DB
SW D...
