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ADS065J016G3 - SiC Schottky Barrier Diode

General Description

VRRM 650 V IF(135℃) 24 A QC 22 nC TO-247-3L Marking DS065016G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-

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Datasheet Details

Part number ADS065J016G3
Manufacturer Sanan
File Size 288.81 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet ADS065J016G3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet ADS065J016G3 650V/16A SiC Schottky Barrier Diode Characteristic ➢ AEC-Q101 Qualified ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device ADS065J016G3 Package TO-247-3L Product Description VRRM 650 V IF(135℃) 24** A QC 22* nC TO-247-3L Marking DS065016G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current To