VRRM
650
V
IF(135℃)
18
A
QC
29
nC
DFN 8
8-4L
Device SDS065J010S3
Package DFN 8
8-4L
Marking DS065010S3
Absolute Maximum Ratings
Parameter
Symbol Value Unit
Test Conditions
Reverse voltage (Repetitive peak)
VRRM
650
TC =25℃
Reverse Voltage (Surge peak)
VRSM
650
V TC =
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Datasheet
650V/10A
SiC Schottky Barrier Diode
Characteristic
➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements
Application
➢ Switching power supply ➢ Power factor correction ➢ Motor drive，traction ➢ Charging pile
SDS065J010S3
Product Description
VRRM
650
V
IF(135℃)
18
A
QC
29
nC
DFN 8*8-4L
Device SDS065J010S3
Package DFN 8*8-4L
Marking DS065010S3
Absolute Maximum Ratings
Parameter
Symbol Value Unit
Test Conditions
Reverse voltage (Repetitive peak)
VRRM
650
TC =25℃
Reverse Voltage (Surge peak)
VRSM
650
V TC =25℃
Reverse voltage (DC)
VDC
650
TC =25℃
38
TC =25℃
Continuous forward current
IF
18
A TC =135℃
10
TC =155℃
Surg
DS065010S3 Datasheet
