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DS065020G3 - SiC Schottky Barrier Diode

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VRRM 650 V IF(135℃) 30 A QC 29 nC TO-247-3L Marking DS065020G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-

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Datasheet Details

Part number DS065020G3
Manufacturer Sanan
File Size 277.19 KB
Description SiC Schottky Barrier Diode
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Datasheet SDS065J020G3 650V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device SDS065J020G3 Package TO-247-3L Product Description VRRM 650 V IF(135℃) 30** A QC 29* nC TO-247-3L Marking DS065020G3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current Total power dissipation
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