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DS065040G2 - SiC Schottky Barrier Diode

Description

VRRM 650 V IF(135℃) 23 A QC 69 nC TO-247-3L Marking DS065040G2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repet

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Datasheet Details

Part number DS065040G2
Manufacturer Sanan
File Size 328.41 KB
Description SiC Schottky Barrier Diode
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Datasheet SDS065J040G2 650V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device SDS065J040G2 Package TO-247-3L Product Description VRRM 650 V IF(135℃) 23* A QC 69* nC TO-247-3L Marking DS065040G2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current Total power dissipation
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