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DS120020G2 - SiC Schottky Barrier Diode

Description

VRRM 1200 V IF(135℃) 13 A QC 51 nC TO-247-3L Marking DS120020G2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repe

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Datasheet Details

Part number DS120020G2
Manufacturer Sanan
File Size 318.21 KB
Description SiC Schottky Barrier Diode
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Datasheet SDS120J020G2 1200V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile Device SDS120J020G2 Package TO-247-3L Product Description VRRM 1200 V IF(135℃) 13* A QC 51* nC TO-247-3L Marking DS120020G2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current Total power dissipati
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