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SDS120J020H3 - SiC Schottky Barrier Diode

General Description

VRRM 1200 V IF(135℃) 29 A QC 108 nC TO-247-2L Device SDS120J020H3 Package TO-247-2L Marking DS120020H3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous

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Datasheet Details

Part number SDS120J020H3
Manufacturer Sanan
File Size 318.65 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SDS120J020H3 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet 1200V/20A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements Application ➢ Switching power supply ➢ Power factor correction ➢ Motor drive,traction ➢ Charging pile SDS120J020H3 Product Description VRRM 1200 V IF(135℃) 29 A QC 108 nC TO-247-2L Device SDS120J020H3 Package TO-247-2L Marking DS120020H3 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) VRRM VRSM VDC Continuous forward current IF Surge non-repetitive forward current IFSM Repetitive Peak Forward Surge IFRM Current 1200 120