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SDS120J030G2 - SiC Schottky Barrier Diode

Datasheet Details

Part number SDS120J030G2
Manufacturer Sanan
File Size 347.08 KB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SDS120J030G2 Datasheet

General Description

VRRM 1200 V IF(135℃) 17* A QC 77* nC TO-247-3L Device SDS120J030G2 Package TO-247-3L Marking DS120030G2 Absolute Maximum Ratings Parameter Symbol Value Unit Test Conditions Reverse voltage (Repetitive peak) Reverse Voltage (Surge peak) Reverse voltage (DC) Continuous forward current (Per Leg/Device) Surge non-repetitive forward current Repetitive Peak Forward Surge Current Total power dissipation i2t value Operating temperature storage temperature Mounting Torque VRRM VRSM VDC IF IFSM IFRM PTOT ∫i2dt Tj Tstg M 1200 1200 1200 37/75 17/35 15/30 150* 84* 136* 112* -55~175 -55~175 1 TC =25℃ V TC =25℃ TC =25℃ TC =25℃ A TC =135℃ TC =144℃ A TC=25℃,tp=10ms,half Sine Pulse TC=25℃,tp=10ms,half Sine Wave A D=0.1 W TC=25℃ A2s TC=25℃, tP=10ms ℃ ℃ Nm M3 Screw SDS120J030G2 1 /4 Rev.

1.0.1 2023.03 Datasheet SDS120J030G2 Thermal Characteristics Parameter Symbol Thermal resistance Rth(j-c) ** Per device * Per leg Min.

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Overview

Datasheet SDS120J030G2 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching.