The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SA1726
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1726 –80 –80 –6 –6 –3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SA1726 –10max –10max –80min 50min∗ –0.5max 20typ 150typ V pF
12.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–80V VEB=–6V IC=–25mA VCE=–4V, IC=–2A IC=–2A, IB=–0.2A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
Unit
µA µA
V
16.0±0.7 8.8±0.2
a b
ø3.75±0.2
MHz
1.35
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
2.5 B C E
0.65 +0.2 -0.1 2.5 1.