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2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3179 80 60 6 4 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2.5 B C E
Application : Audio and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=1V IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz 100max 100max 60min 40min 0.6max 15typ 60typ
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
2SC3179
Unit
µA µA
V V pF
12.0min 16.0±0.7 8.8±0.2
a b
ø3.75±0.2
4.0max
MHz
1.35
0.65 +0.2 -0.1 2.5 1.
2SC3179 Datasheet
