2SC3179
Silicon NPN Triple Diffused Planar Transistor (plement to type 2SA1262) s Absolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3179 80 60 6 4 1 30(Tc=25°C) 150
- 55 to +150 Unit V V V A A W °C °C
2.5 B C E
Application : Audio and General Purpose
(Ta=25°C) s Electrical Characteristics
Symbol ICBO IEBO V(BR)CEO h FE VCE(sat) f T COB Conditions VCB=80V VEB=6V IC=25m A VCE=4V, IC=1V IC=2A, IB=0.2A VCE=12V, IE=- 0.2A VCB=10V, f=1MHz 100max 100max 60min 40min 0.6max 15typ 60typ
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
Unit
µA µA
V V p F
12.0min 16.0±0.7 8.8±0.2 a b
ø3.75±0.2
4.0max
MHz
0.65 +0.2 -0.1 2.5 1.4 s Typical Switching Characteristics (mon Emitter)
VCC (V) 20 RL (Ω) 10 IC (A) 2 VBB1 (V) 10 VBB2 (V)
- 5 IB1 (m A) 200 IB2 (m A)
- 200 ton (µs) 0.2typ tstg (µs) 1.9typ tf (µs) 0.29typ
Weight : Approx 2.6g a. Type No. b. Lot No.
- V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V...
