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2SC3832
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3832 500 400 10 7(Pulse14) 2 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=3A IC=3A, IB=0.6A IC=3A, IB=0.6A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 50typ
(Ta=25°C) 2SC3832 Unit
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
µA µA
V V MHz pF
2.5 12.0min 4.0max 16.0±0.7 8.8±0.2
a b
ø3.75±0.2
V
1.35
0.65 +0.2 -0.1 2.5 B C E 1.
2SC3832 Datasheet
