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Built-in Diode at C–E Low VCE (sat)
2SC4065
(Ta=25°C) 2SC4065 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ V V MHz PF
13.0min
Equivalent circuit B
C
( 400 Ω )
E
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1568) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4065 60 60 6 ±12 3 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : DC Motor Driver and General Purpose External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VFEC fT COB Conditions VCB=60V VEB=6V IC=25mA VCE=1V, IC=6A IC=6A, IB=1.3A VECO=10A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
Unit
µA
V
16.9±0.3 8.4±0.2
mA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.
2SC4065 Datasheet
