The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC4468
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
200
V
VCEO VEBO IC IB PC Tj Tstg
140
V
6
V
10
A
4
A
100(Tc=25°C)
W
150
°C
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB
Conditions VCB=200V
VEB=6V IC=50mA VCE=4V, IC=3A IC=5A, IB=0.5A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
Ratings 10max 10max 140min 50min∗ 0.5max 20typ 250typ
Unit µA µA V
V MHz pF
∗hFE Rank O(50 to100), P(70 to140), Y(90 to180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(A)
60
12
5
10
–5
0.5
IB2 (A)
–0.5
ton (µs)
0.24typ
tstg (µs)
4.
2SC4468 Datasheet
