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2SC4512
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4512 120 80 6 6 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC4512 10max 10max 80min 50min 0.5max 20typ 110typ V MHz pF
12.0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=5A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
Unit
µA µA
16.0±0.7
V
8.8±0.2
a b
ø3.75±0.2
O(50 to100), P(70 to140), Y(90 to180)
2.5 B C E
4.0max
1.35
0.65 +0.2 -0.1 2.5 1.
2SC4512 Datasheet
